...
首页> 外文期刊>Microwave Theory and Techniques, IEEE Transactions on >The Effects of Limited Drain Current and On Resistance on the Performance of an LDMOS Inverse Class-E Power Amplifier
【24h】

The Effects of Limited Drain Current and On Resistance on the Performance of an LDMOS Inverse Class-E Power Amplifier

机译:有限的漏极电流和导通电阻对LDMOS反向E类功率放大器的性能的影响

获取原文
获取原文并翻译 | 示例

摘要

In this paper, the effects of limited drain current and transistor''s on resistancee on the performance of an LDMOS inverse class-E power amplifier (PA) are analyzed using a simplified transistor model of piecewise linear dc I–V curves. The minimal magnitude of driving signal, the maximal voltage gain, and the maximal output power of an inverse class-E PA can be defined with the maximal drain kept. The theoretical and simulated results of amplifier performance, such as drain efficiency and output voltage, are compared to verify the analysis, and the nonlinear relation among the drain dc supply voltage, input/output voltage, and phase of an inverse class-E PA caused by limited drain current are presented. The effects on the amplifier performance are further verified by the measured results of a 945-MHz transmission-line inverse class-E amplifier in comparison with the corresponding theoretical and simulated results.
机译:在本文中,使用简化的分段线性直流I-V曲线晶体管模型,分析了有限的漏极电流和晶体管对电阻的影响,从而降低了LDMOS反向E类功率放大器(PA)的性能。可以在保持最大漏极的情况下定义驱动信号的最小幅度,最大电压增益和反向E类PA的最大输出功率。比较了放大器性能(如漏极效率和输出电压)的理论和仿真结果,以验证分析,并验证了漏极直流电源电压,输入/输出电压和反相E类PA的相位之间的非线性关系。限制了漏极电流。与相应的理论和仿真结果相比,通过945MHz传输线反向E类放大器的测量结果进一步验证了对放大器性能的影响。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号