Design and Fabrication of Broadband Hybrid GaAs Schottky Diode Frequency Multipliers

摘要

Frequency extender modules of vector network analyzers and signal generators, as well as front-end modules of semiconductor automatic test systems, make use of broadband resistive diode frequency multipliers. This paper presents the design and fabrication of innovative planar varistor frequency multipliers. Three frequency triplers (#1, #2, #3) and two frequency doublers (#4, #5), operating in the 60–110 GHz and 50–110 GHz frequency ranges, respectively, are designed. The hybrid architecture utilizes commercial gallium arsenide Schottky diodes from United Monolithic Semiconductors on thin-film processed high-permittivity alumina substrate. Synthesis is based on a co-simulation procedure between 3-D electromagnetic field and nonlinear harmonic balance circuit simulations. Scalar and spectral measurement data over the focused output frequency ranges are presented. Conversion loss values around 18 dB from 60 to 95 GHz and below 22 dB from 60 to 110 GHz are achieved with frequency tripler #1. Frequency doubler #5 achieves conversion loss values below 15 dB from 50 to 89 GHz and below 22 dB from 50 to 110 GHz. A comprehensive comparison of the presented work with reported frequency multipliers is included.