A 453-$mu{hbox{W}}$ 53–70-GHz Ultra-Low-Power Double-Balanced Source-Driven Mixer Using 90-nm CMOS Technology

摘要

An ultra-low-power consumption and ultra-low local oscillator (LO) power double-balanced down-conversion mixer using standard 90-nm CMOS technology is presented in this paper. By employing a weak inversion biasing technique in a source-driven topology, the proposed $V$-band mixer can operate at microwatt power consumption of 453 $mu{hbox{W}}$ and has an ultra low LO power of ${-}{hbox{6 dBm}}$. In addition, under 1.2-V standard supply voltage, the down-conversion mixer exhibits excellent conversion-gain flatness of ${hbox {5.9}}{pm}{{hbox {1.5}}}~{hbox {dB}}$ and the measured LO-to-RF isolation is more than 37 dB from 53 to 70 GHz, and ${rm OP}_{rm 1 dB}$ of ${-}{hbox{9.2 dBm}}$ at RF frequency of 60 GHz. Based on aforementioned results, the presented monolithic microwave integrated circuit can mitigate power-hungry issues while providing reasonable RF performance, which is important for a low-power communication system.