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机译:HEMT装置中寄生电阻的无损,自载萃取方法
Univ Roma Tor Vergata Dept Elect Engn I-00133 Rome Italy;
Univ Roma Tor Vergata Dept Elect Engn I-00133 Rome Italy;
Univ Roma Tor Vergata Dept Elect Engn I-00133 Rome Italy;
Univ Roma Tor Vergata Dept Elect Engn I-00133 Rome Italy;
Univ Roma Tor Vergata Dept Elect Engn I-00133 Rome Italy;
OMMIC F-94450 Limeil Brevannes France;
OMMIC F-94450 Limeil Brevannes France;
Univ Roma Tor Vergata Dept Elect Engn I-00133 Rome Italy;
HEMTs; Mathematical model; Integrated circuit modeling; Logic gates; Resistance; Extrinsic circuit; high-electron-mobility transistor (HEMT); parasitic resistances; small-signal equivalent circuit (SSEC);
机译:AlGaN / GaN HEMT中访问寄生电阻的全貌提取:对器件线性度和沟道电子速度的影响
机译:AlGaN / GaN HEMT中访问寄生电阻的全貌提取:对器件线性度和沟道电子速度的影响
机译:HEMT中两种直流提取方法的迁移率和寄生电阻的比较
机译:GaN HEMT中基于偏置的寄生电阻,迁移率和虚拟栅极长度的电阻提取方法
机译:亚微米MOSFET的寄生电阻建模和提取
机译:狗猫口服强力霉素后流速收集装置和提取方法对泪液浓度的影响
机译:复杂形电力输送网络早期分析的寄生电阻提取方法
机译:超低噪声HEmT器件模型:晶圆上低温噪声分析和改进参数提取技术的应用