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PWM-Type Amorphous Wire CMOS IC Magneto-Impedance Sensor Having High-Temperature Stability

机译:具有高温稳定性的PWM型非晶线CMOS IC磁阻传感器

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The authors have presented a pulse frequency modulation (PFM) amorphous wire CMOS IC magneto-impedance (MI) sensor for the purpose of omitting the A/D converter in the electronic compass for mobile phone application by counting the output square wave voltage width with the number of timing pulses of the microprocessor. Elimination of A/D converters is useful for downsizing, speed up and cost cutting in the mobile phone electronic compass. However, output stability of the PFM-MI sensor should be improved by canceling the fluctuation of sensor circuit parameter (R, C) with temperature variation. They recently constructed a pulsewidth modulation (PWM) amorphous wire CMOS IC MI sensor on the basis of the PFM-MI sensor detecting the pulse duty ratio proportional to the applied magnetic field strength, in which the sensor circuit parameter (R, C) are canceled in the sensor output equation for the improvement of the magnetic field sensing stability to temperature variation.
机译:作者已经提出了一种脉冲频率调制(PFM)非晶线CMOS IC磁阻抗(MI)传感器,其目的是通过计算输出方波电压宽度和频率,从而省略用于手机的电子罗盘中的A / D转换器。微处理器的定时脉冲数。消除A / D转换器有助于减小手机电子罗盘的尺寸,加快其速度并降低成本。但是,应通过消除传感器电路参数(R,C)随温度变化的波动来提高PFM-MI传感器的输出稳定性。他们最近基于PFM-MI传感器构造了脉宽调制(PWM)非晶线CMOS IC MI传感器,该传感器检测与施加的磁场强度成比例的脉冲占空比,其中取消了传感器电路参数(R,C)在传感器输出方程中用于改善磁场感应对温度变化的稳定性。

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