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High frequency response of thin film heads by scanning Kerr effect microscopy

机译:扫描克尔效应显微镜对薄膜头的高频响应

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A scanning Kerr effect microscope (SKEM) was built that features 0.025- mu m step sizes and 5 degrees phase resolution over a 50-MHz bandwidth. Scans were made on several NiFe and CoZr thin-film recording heads with different head geometries. The measured values of head saturation are in rough agreement with those calculated from a model for saturation near the back gap. The frequency response of the NiFe heads shows that the real component of the efficiency rolls off smoothly, and the imaginary component peaks between 15 and 40 MHz. The bandwidth increases with DC efficiency and is two to three times lower than computed values. The frequency response of the CoZr head showed peaks and valleys that were attributed to a misoriented easy axis. The response of the heads studied here is most likely determined by domain behavior.
机译:建立了扫描Kerr效应显微镜(SKEM),该显微镜在50 MHz带宽上具有0.025微米的步长和5度的相位分辨率。在具有不同磁头几何形状的几个NiFe和CoZr薄膜记录磁头上进行扫描。磁头饱和度的测量值与根据模型计算的后间隙附近的饱和度大致一致。 NiFe磁头的频率响应表明,效率的实部平稳下降,虚部在15至40 MHz之间达到峰值。带宽随直流效率而增加,比计算值低两到三倍。 CoZr磁头的频率响应显示出峰值和谷值,这归因于易取向的易轴。此处研究的负责人的响应很可能由域行为决定。

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