METHOD FOR VERIFYING PROCESS QUALITY USING QUANTITIVE STATISTICAL VALUES THROUGH GRAIN BOUNDARY SCANNING ELECTRONE MICROSCOPY IMAGE PROCESSING OF LOW-TEMPERATURE POLYSILICON THIN FILM TRANSISTOR ACTIVE LAYER AND APPARATUS

摘要

Provided are a method for verifying process quality using quantitative statistical values through grain boundary scanning electron microscopy image processing of a low-temperature polysilicon thin film transistor active layer and an apparatus. According to the present invention, the method for verifying process quality using quantitative statistical values through grain boundary scanning electron microscopy image processing of the low-temperature polysilicon thin film transistor active layer includes the following steps of: extracting a scanning electron microscope image of an active layer of a thin film transistor; generating structure data by extracting digital data about distribution of grains with respect to the extracted image; and analyzing and storing statistical values for quality of the active layer based on the generated structure data.;COPYRIGHT KIPO 2020