Transient Sensitivity of Sectorial Split-Drain Magnetic Field-Effect Transistor

摘要

This paper proposed an analytical model on the geometric dependence of the transient sensitivity and transient sensing hysteresis of sectorial split-drain magnetic field-effect transistors (SD-MAGFETs). We also conjectured that the transient sensing hysteresis is caused by the charge trapped on channel boundary, and is also geometric dependent. Experimental results are presented which show good consistence with the analytical derivation. The derived analytical model and experimental results can be used as a design guideline for the optimization and trade-off of the transient sensitivity and transient sensing hysteresis of the sectorial SD-MAGFETs.