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The limit of fluxgate sensitivity due to Barkhausen noise for single layer and bi-layer permalloy thin film cores

机译:单层和双层坡莫合金薄膜磁芯由于Barkhausen噪声而导致的磁通门灵敏度极限

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In its simplest form, the thin film fluxgate sensor measures the applied magnetic field by determining the difference in switching field as the cores change their direction of magnetisation. The ultimate sensitivity of such a configuration is determined by the intrinsic variation, or jitter, in the switching field value from cycle to cycle due to Barkhausen noise in the cores. Comparisons of the noise performance of different cores may be made by examining the associated jitter noise power spectra. The results show that under ambient conditions a single layer permalloy film of thickness 100 nm is less noisy than a bi-layer film of the same magnetic thickness. If a hard axis bias field, H/sub b/, is applied, however, then as the bias field approaches the anisotropy field, H/sub k/, the performance of the single layer material worsens and that of the bi-layer improves. For H/sub b/<0.5 H/sub k/, the bi-layer film shows the better performance. There is an associated decrease in the height of the switching pulse as the magnetisation vector rotates through a smaller angle when the bias field is applied, but provided the detection electronics are able to resolve the pulse above the electronic noise floor, a suitably designed fluxgate sensor will continue to operate.
机译:薄膜磁通门传感器以其最简单的形式,通过确定铁心改变其磁化方向时的开关场差异来测量施加的磁场。由于磁芯中的巴克豪森噪声,每个周期之间的切换磁场值的固有变化或抖动决定了这种配置的最终灵敏度。可以通过检查相关的抖动噪声功率谱来比较不同内核的噪声性能。结果表明,在环境条件下,厚度为100 nm的单层坡莫合金膜的噪音小于相同磁性厚度的双层膜。但是,如果施加硬轴偏置场H / sub b /,则当偏置场接近各向异性场H / sub k /时,单层材料的性能变差,双层材料的性能提高。对于H / sub b / <0.5 H / sub k /,双层膜表现出更好的性能。当施加偏置磁场时,随着磁化矢量旋转较小的角度,开关脉冲的高度会相应降低,但前提是检测电子设备能够将电子噪声本底以上的脉冲分解,则可适当设计磁通门传感器将继续运作。

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