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Effect of Composition on the Ordered Phase Formation in Co-Pt Thin Film Deposited on MgO(111) Single-Crystal Substrate

机译:组成对MgO(111)单晶衬底上沉积Co-Pt薄膜有序相形成的影响

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摘要

CoPt (at. %) alloy epitaxial films with the close-packed plane parallel to the substrate surface are prepared on MgO(111) substrates heated at 300 °C by varying the Co content of x from 0 to 100. The stacking sequence of close-packed plane (the volume ratios of fcc and hcp crystals, V and V) and the order degree are quantitatively determined. The films with Pt-rich and nearly equiatomic compositions primarily consist of fcc crystals (V >0.9). With increasing the x value beyond 56, the V value drastically increases. The films with Co-rich compositions consist of mixtures of hcp (V ≈0.8) and fcc (V ≈ 0.2) crystals. The films with 31 ≤x≤ 86 involve metastable ordered phases. The order degree of S,Bh is kept constant around 0.25 in a compositional range of 31 × 75. From the viewpoints of volume ratios of fcc and hcp crystals and order degree, the crystal structure is determined to vary A1 A1 + SFs (SFs: stacking faults) L1+ SFs ⇒L1+ Bh (+D0) ⇒A3 + SFs with increasing the x value. The films including ordered phases show strong perpendicular magnetic anisotropies. It is shown that the uniaxial magnetocrystalline anisotropy energy of CoPt film can be kept >10 erg/cm while controlling the saturation magnetization from 600 to 1150 emu/cm.
机译:通过将x的Co含量从0更改为100,在加热到300°C的MgO(111)基板上制备了密排平面平行于基板表面的CoPt(at。%)合金外延膜。定量测定堆积平面(fcc和hcp晶体的体积比,V和V)和有序度。具有富Pt且几乎等原子组成的薄膜主要由fcc晶体组成(V> 0.9)。随着x值增加到超过56,V值急剧增加。具有富钴成分的薄膜由hcp(V≈0.8)和fcc(V≈0.2)晶体的混合物组成。 31≤x≤86的薄膜包含亚稳态有序相。在31×75的组成范围内,S,Bh的有序度保持在0.25左右恒定。从fcc和hcp晶体的体积比和有序度的角度来看,确定晶体结构可以改变A1 A1 + SFs(SFs:堆叠故障)L1 + SFs⇒L1 + Bh(+ D0)⇒A3 + SFs随着x值的增加而增加。包括有序相的膜显示出强的垂直磁各向异性。结果表明,在将饱和磁化强度控制在600至1150 emu / cm的同时,CoPt膜的单轴磁晶各向异性能可以保持> 10 erg / cm。

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