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Thermal stability of L11 ordered phase in CoPt-alloy thin films formed on MgO(111) single-crystal substrates

机译:MgO(111)单晶衬底上形成的CoPt合金薄膜中L11有序相的热稳定性

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Metastable L11 ordered CoPt(111) epitaxial thin films with the order degrees around 0.3 are formed on MgO(111) single-crystal substrates at 300 °C by using an ultra-high vacuum radio-frequency magnetron sputtering system. The effects of annealing after film formation on the structure and the magnetic properties are investigated. As the annealing temperature increases, the order degree gradually decreases. At 600 °C, the ordered phase disappears and the film changes to disordered structure. CoPt(111) epitaxial films with disordered structure are also prepared at room temperature and 600 °C and then these films are annealed at 300 °C. However, ordered phase formation is not recognized in the films. The metastable L11 ordered phase is preferentially formed when the film is deposited at a temperature of 300 °C. Annealing a film with disordered structure at 300 °C does not promote L11 ordering. The CoPt films involving L11 ordered structure show perpendicular magnetic anisotropies, whereas the disordered films have in-plane anisotropies. The magnetic properties are influenced by the order degree.
机译:通过使用超高真空射频磁控溅射系统,在300°C的MgO(111)单晶衬底上,形成度数约为0.3的亚稳态L11有序CoPt(111)外延薄膜。研究了成膜后退火对组织和磁性能的影响。随着退火温度的升高,有序度逐渐降低。在600°C下,有序相消失,薄膜变为无序结构。还在室温和600°C下制备了具有无序结构的CoPt(111)外延膜,然后在300°C下对这些膜进行退火。然而,在膜中没有识别出有序的相形成。当在300°C的温度下沉积薄膜时,亚稳态的L11有序相会优先形成。在300°C下对具有无序结构的薄膜进行退火不会促进L11有序化。涉及L11有序结构的CoPt膜表现出垂直的磁各向异性,而无序膜则具有面内各向异性。磁性能受有序度的影响。

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