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Effect of Mn thickness on the Mn-Ge phase formation during reactions of 50 nm and 210 nm thick Mn films deposited on Ge (111) substrate

机译：mn厚度对沉积在Ge（111）衬底上的50 nm和210 nm厚mn薄膜反应过程中mn-Ge相形成的影响

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O. Abbes; F. Xu; A. Portavoce; C. Girardeaux; K. Hoummada; V. Le Thanh;
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1. Effect of Mn thickness on the Mn-Ge phase formation during reactions of 50 nm and 210 nm thick Mn films deposited on Ge (111) substrate [J] . O. Abbes, F. Xu, A. Portavoce, Diffusion and Defect Data. Solid State Data, Part A. Defect and Diffusion Forum . 2012,第Null期

机译：Mn厚度对在Ge（111）衬底上沉积50 nm和210 nm厚Mn膜的反应过程中Mn-Ge相形成的影响
2. A 100 nm thick InGaN/GaN multiple quantum-well column-crystallized thin film deposited on Si(111) substrate and its micromachining [J] . Hu FR, Kanamori Y, Ochi K, Nanotechnology . 2008,第3期

机译：Si（111）衬底上沉积的100 nm厚InGaN / GaN多量子阱柱晶薄膜及其微加工
3. Sequential phase formation during reactive diffusion of a nanometric-thick Mn film on Ge(111) [J] . Abbes O., Xu F., Portavoce A., Diffusion and Defect Data. Solid State Data, Part B. Solid State Phenomena . 2011,第Pta1期

机译：在Ge（111）上纳米厚的Mn膜反应性扩散过程中的相序形成
4. Effect of Mn thickness on the Mn-Ge phase formation during reactions of 50 nm and 210 nm thick Mn films deposited on Ge (111) substrate [C] . O. Abbes, F. Xu, A. Portavoce, International Conference on Diffusion in Materials . 2012

机译：Mn厚度对50nm和210nm厚Mn薄膜的Mn-Ge相形成的影响Ge（111）衬底的反应
5. Phase transitions and magnetocaloric effect in MnNiGe 1--xAlx, Ni50Mn35(In1--x Crx)15 and (Mn1--xCrx)NiGe 1.05. [D] . Quetz, Abdiel. 2014

机译：MnNiGe 1-xAlx，Ni50Mn35（In1-x Crx）15和（Mn1-xCrx）NiGe 1.05中的相变和磁热效应。
6. Induced high-temperature ferromagnetism by structural phase transitions in strained antiferromagnetic γ-Fe50Mn50 epitaxial films [O] . Younghun Hwang, Sungyoul Choi, Jeongyong Choi, -1

机译：应变反铁磁γ-Fe50Mn50外延膜中结构相变引起的高温铁磁性
7. Resistance Switching Behavior Dependent of Substrate Temperature for ZnMn2O4 Films Deposited by Magnetron Sputtering [O] . Hua Wang, Zhida Li, Jiwen Xu, 2015

机译：磁控溅射沉积的ZnMN2O4薄膜的基板温度依赖性的电阻切换行为

Effect of Mn thickness on the Mn-Ge phase formation during reactions of 50 nm and 210 nm thick Mn films deposited on Ge (111) substrate

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