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Local Rank Modulation for Flash Memories

机译:闪存的本地等级调制

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摘要

Local rank modulation (LRM) scheme was suggested for representing the information in Hash memories in order to overcome the drawbacks of rank modulation. For 0 < s <= t <= n with s dividing n, an (s, t, n)-LRM scheme is a LRM scheme where the n cells are locally viewed cyclically through a sliding window of size t resulting in a sequence of small permutations, which requires less comparisons and less distinct values. The gap between two such windows equals to s. In this paper, encoding, decoding, and asymptotic enumeration of the (1, t, n)-LRM scheme are studied.
机译:为了克服秩调制的缺点,建议使用局部秩调制(LRM)方案来表示Hash存储器中的信息。对于0

著录项

  • 来源
    《IEEE Transactions on Information Theory》 |2019年第3期|1705-1713|共9页
  • 作者

    Horovitz Michal; Etzion Tuvi;

  • 作者单位

    Technion Israel Inst Technol, Dept Comp Sci, IL-3200003 Haifa, Israel|Tel Hai Coll, Dept Comp Sci, IL-11016 Kiryat Shmona, Israel|Galilee Res Inst Migal, IL-11016 Kiryat Shmona, Israel;

    Technion Israel Inst Technol, Dept Comp Sci, IL-3200003 Haifa, Israel;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Flash memory; local rank modulation;

    机译:闪存;本地等级调制;

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