Multicell Circuit Model for High-Power Thyristor-Type Semiconductor Devices

摘要

New device models for circuit simulation are developed for high-power thyristor-type devices, such as gate-turn-off thyristors, integrated gate-commutated thyristors, and MOS turn-off thyristors. These models are based on semiconductor physics, which guarantees a wide range of validity. In particular, the proposed models are based on the lumped charge approach. Coupled electrical and thermal behavior is implemented to allow transient thermal simulations. To account for the nonuniform current distribution during turn-off, several of these single-cell models are connected in parallel to simulate a complete device. Simulation results are compared with measurements.