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首页> 外文期刊>Journal of Communications Technology and Electronics >Thermoelectric models of high-power bipolar semiconductor devices. Part II. Nonlinear model of LEDs
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Thermoelectric models of high-power bipolar semiconductor devices. Part II. Nonlinear model of LEDs

机译:大功率双极型半导体器件的热电模型。第二部分LED的非线性模型

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摘要

A thermoelectric model of a high-power heterojunction LED is developed, and the distributions of temperature and current density in the LED structure are obtained with allowance for several effects of thermal feedback. It is demonstrated that the dependence of the quantum efficiency on the current density and temperature leads to a significant nonuniformity of the temperature and current-density distributions in the LED structure. The calculated results are proven by the experimental dependences of the junction-housing thermal resistances of particular LEDs on the current. The Comsol Multiphysics simulation medium is interactively involved in the calculation and analysis of the temperature and current-density distributions in the LED structure with a thermophysical macrodefect in the approximation of the local thermal feedback. A critical size of the macrodefect that corresponds to the maximum nonuniformity of the thermal distribution is obtained.
机译:建立了大功率异质结LED的热电模型,并考虑了热反馈的几种影响,获得了LED结构中的温度和电流密度分布。已经证明,量子效率对电流密度和温度的依赖性导致LED结构中温度和电流密度分布的显着不均匀性。计算结果由特定LED的结壳热阻对电流的实验依赖性证明。 Comsol Multiphysics仿真介质以局部热反馈的近似方式,通过热物理宏观缺陷,交互式地参与了LED结构中温度和电流密度分布的计算和分析。获得与热分布的最大不均匀性相对应的宏观缺陷的临界尺寸。

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    Sergeev V. A.; Khodakov A. M.;

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    Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Ulyanovsk Branch, Ulyanovsk 432011, Russia;

    Russian Acad Sci, Kotelnikov Inst Radio Engn & Elect, Ulyanovsk Branch, Ulyanovsk 432011, Russia;

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