THYRISTOR-TYPE ISOLATION STURCTURE OF SEMICONDUCTOR DEVICE

摘要

Between a conductive pad to which a high frequency signal is applied and a silicon substrate, a P-type semiconductor substrate, an N well formed in the substrate, a P-type junction formed in the N well, and an N-type dopant formed on a surface of the substrate A thyristor type isolation structure including a conductive layer is disclosed. Here, the conductive layer may be formed of a polysilicon and cobalt silicide layer. Through this, it is possible to minimize the distortion and loss of the high frequency signal applied to the conductive pad using the conventional CMOS process.;PGS, isolation structure