Experimentally validated circuit-simulation model of thyristor-type devices based on semiconductor physics

摘要

Accurate circuit-simulations of power-electronic circuits need precise device models. Unfortunately, all commercially available circuit simulation programs lack suitable models of high-power thyristor-type, i.e. GTO, GCT or MTO, devices. In this paper, a circuit-simulation model of thyristor-type devices is presented and evaluated. The model is based on semiconductor physics and allows transient thermal simulations. The simulation results are compared to measurements on a high-power test-bench showing excellent agreement. When the operating conditions, i.e. load current, DC-bus voltage and device temperature, are varied, excellent agreement remains between measurements and simulations. This proofs the large range of validity of these new models.