首页> 外国专利> ORGANIC SEMICONDUCTOR STURCTURE AND METHODD OF MANUFACTURING THE SAME ORGANIC THIN FILM TRANSISTOR USING THE ORGANIC SEMICONDUCTOR STURCTURE AND METHOD OF MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR AND DISPLAY APPARATUS USING THE SAME

ORGANIC SEMICONDUCTOR STURCTURE AND METHODD OF MANUFACTURING THE SAME ORGANIC THIN FILM TRANSISTOR USING THE ORGANIC SEMICONDUCTOR STURCTURE AND METHOD OF MANUFACTURING THE ORGANIC THIN FILM TRANSISTOR AND DISPLAY APPARATUS USING THE SAME

机译:有机半导体结构以及使用该有机半导体结构制造相同的有机薄膜晶体管的方法以及使用该有机薄膜结构制造有机薄膜晶体管和显示装置的方法

摘要

The organic semiconductor structure , a method of manufacturing an organic thin film transistor using the same, and a preparation method thereof and a display device using the same. is disclosed . An organic semiconductor structure is disposed on the base substrate , the first conductive pattern with the first decimal part of a first hydrophilic portion and a hydrophobic property with a hydrophilic property , disposed on the base substrate and is disposed adjacent to the first hydrophilic portion hydrophilic connecting a second hydrophilic portion and a hydrophobic property with a characteristic second fractional part the second conductive pattern and the first hydrophilic portion and a second hydrophilic portion having an electrically with and includes the organic semiconductor pattern having a hydrophilic property .
机译:有机半导体结构,使用该有机半导体结构制造有机薄膜晶体管的方法,其制备方法和使用该结构的显示装置。被披露。有机半导体结构设置在基础基板上,具有第一亲水部分的第一小数部分的第一导电图案和具有亲水性质的疏水性设置在基础基板上,并且与第一亲水部分亲水地相邻设置第二亲水部分和具有疏水性质的第二部分,第二导电图案和第一亲水部分和第二亲水部分具有导电性,并包括具有亲水性质的有机半导体图案。

著录项

  • 公开/公告号KR101279296B1

    专利类型

  • 公开/公告日2013-06-26

    原文格式PDF

  • 申请/专利权人 엘지디스플레이 주식회사;

    申请/专利号KR20060034446

  • 发明设计人 최낙봉;김민주;

    申请日2006-04-17

  • 分类号H01L29/786;H01L51/52;

  • 国家 KR

  • 入库时间 2022-08-21 16:24:55

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