Method of Precise Positioning for Defect Failure Analysis Based on Nano-Probing and EBAC

摘要

Failure analysis (FA) becomes increasingly crucial for semiconductor industries with the scale-down and larger integration of devices. In order to overcome the limitation of traditional optical resolution for FA techniques, this article proposed an effective method of precise positioning of circuit defect based on localized probing technique, nano-probing and electron beam absorbed current (EBAC). Open circuit, short circuit and gate/capacitor oxide defects were the most common failures in IC manufactures, therefore representative examples based on these failures were employed to illustrate the analysis procedure and effectiveness of the proposed method. Scanning electron microscope (SEM), focused ion beam (FIB) and transmission electron microscope (TEM) results were presented to verify the accuracy of the positioning. It was demonstrated that the proposed precise positioning method was able to accurately locate the defect position, and was useful for determining the failure mechanism as well. The method showed great potential for improving the success rate of FA for semiconductor devices.