Layout Decomposition for Triple Patterning Lithography

摘要

As minimum feature size and pitch spacing further scale down, triple patterning lithography is a likely 193 nm extension along the paradigm of double patterning lithography for 14-nm technology node. Layout decomposition, which divides input layout into several masks to minimize the conflict and stitch numbers, is a crucial design step for double/triple patterning lithography. In this paper, we present a systematic study on triple patterning layout decomposition problem, which is shown to be NP-hard. Because of the NP-hardness, the runtime required to exactly solve it increases dramatically with the problem size. We first propose a set of graph division techniques to reduce the problem size. Then, we develop integer linear programming (ILP) to solve it. For large layouts, even with the graph-division techniques, ILP may still suffer from serious runtime overhead. To achieve better trade-off between runtime and performance, we present a novel semidefinite programming (SDP)-based algorithm. Followed by a mapping process, we can translate the SDP solutions into the final decomposition solutions. Experimental results show that the graph division can reduce runtime dramatically. In addition, SDP-based algorithm can achieve great speed-up even compared with accelerated ILP, with very comparable results in terms of the stitch number and the conflict number.