An Integrated Patch-Clamp Amplifier in Silicon-on-Sapphire CMOS

摘要

We designed and tested an integrated patch-clamp amplifier capable of recording from pico to tens of microamperes of current. The high-dynamic range of seven decades and the picoampere sensitivity of the instrument was targeted to whole-cell patch-clamp recordings. The prototype was fabricated on a 0.5-mum silicon-on-sapphire process. The device employs an integrating headstage with a pulse frequency modulated output, ranging from 3 Hz to 10 MHz. A digital interface produces a 16-bit output conversion of the input currents. We report on electronic characterization of the fabricated device, dynamic performance, and examples of measurements on biological cells for patch-clamp applications. The device will be used in an advanced planar high-throughput patch-clamp screening system for testing medicines