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A 0.13-$mu{rm m}$ CMOS Low-Power Capacitor-Less LDO Regulator Using Bulk-Modulation Technique

机译:采用批量调制技术的0.13- $ mu {rm m} $ CMOS低功耗无电容LDO稳压器

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摘要

In this paper, a bulk-modulation technique is introduced for improving the performance of low-drop-out (LDO) voltage regulators. Compared to conventional LDO voltage regulators, the proposed circuit achieves improved accuracy, stability, and output load current capability. The technique is particularly suited for low-power applications such as biomedical implants and portable devices. A proof-of-concept prototype is designed and fabricated in 0.13- CMOS, to illustrate the enhancement that can be achieved by applying this technique. The proposed enhanced LDO regulator which is based on conventional LDO regulators is able to delivers up to 5 mA of load current while providing a 1 V (1.5% load regulation) drawing 99.0 from a 1.2 V supply. Measurement results confirm that as compared to conventional LDOs, the proposed circuit offers better stability as well as %75 improvement in the load current delivery and faster recovery time for no-load to and from full-load transitions.
机译:本文介绍了一种体调制技术,用于改善低压降(LDO)稳压器的性能。与传统的LDO稳压器相比,该电路具有更高的精度,稳定性和输出负载电流能力。该技术特别适合于低功率应用,例如生物医学植入物和便携式设备。概念验证原型是在0.13-CMOS中设计和制造的,以说明通过应用此技术可以实现的增强。建议的增强型LDO稳压器基于传统LDO稳压器,能够提供高达5 mA的负载电流,同时提供1.2 V电源提供的1 V(1.5%负载调节率)为99.0。测量结果证实,与传统的LDO相比,所提出的电路具有更好的稳定性,并且在负载电流传输方面提供了%75的改进,并实现了从空载到满载跳变的更快恢复时间。

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