首页> 外文期刊>IEEE transactions on circuits and systems . I , Regular papers >FET-R-C Circuits: A Unified Treatment—Part II: Extension to Multi-Paths, Noise Figure, and Driving-Point Impedance
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FET-R-C Circuits: A Unified Treatment—Part II: Extension to Multi-Paths, Noise Figure, and Driving-Point Impedance

机译:FET-R-C电路:统一的处理-第II部分:扩展至多路径,噪声系数和驱动点阻抗

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摘要

In Part I of this paper, we introduce useful analysis that leads to a simple signal flow graph (SFG), which captures the FET-R-C circuit's action completely across a wide range of design parameters. Part I focuses on the analysis of a single-path FET-R-C circuit's signal transfer characteristics and gives us guidelines for sample-and-hold (S/H) and passive sampling mixer (P-M) designs. Part II extends the analysis to multi-path FET-R-C circuit configurations, e.g., a complex I-Q passive mixer that is common in RF applications. Then the noise and driving-point impedance analyses are carried out to provide valuable insights of practical S/H and P-M designs.
机译:在本文的第一部分中,我们介绍了有用的分析,这些分析导致产生简单的信号流图(SFG),该信号流图完全涵盖了各种设计参数中的FET-R-C电路的作用。第一部分着重分析单路FET-R-C电路的信号传输特性,并为我们提供了采样保持(S / H)和无源采样混频器(P-M)设计的指南。第二部分将分析扩展到多路径FET-R-C电路配置,例如RF应用中常见的复杂I-Q无源混频器。然后进行噪声和驱动点阻抗分析,以提供有关实际S / H和P-M设计的宝贵见解。

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