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Design of a 0.20–0.25-V, Sub-nW, Rail-to-Rail, 10-bit SAR ADC for Self-Sustainable IoT Applications

机译:设计0.20-0.25-V,Sub-NW,轨到铁路,10位SAR ADC,用于自动可持续的物联网应用

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This paper presents a 10-bit SAR ADC operating at a supply voltage (VDD) from 0.200 to 0.250 V. In the proposed ADC structure, the positive input of the comparator is fixed at VDD to bias the comparator's input transistor pair with a sufficient gate-to-source voltage at such a low VDD. We propose an ultra-low VDD temperature-compensated bias generator to bias the comparator for addressing the severe temperature-dependent issue of the MOSFETs in the comparator, which operate in the deep subthreshold region. Detailed circuit analysis and derivation of design requirements are presented. A double-boosted and low-leakage sampling switch is also proposed to alleviate the severe leakage issue at low sampling rates. A test chip has been designed and fabricated in 180-nm CMOS. The ADC core occupies only 0.024 mm(2). Measurement results show that the ADC achieves stable performance in the VDD range. At 0.225 V, the DNL and INL are within +1.04/-0.66 and +0.97/-1.04 LSB in the rail-to-rail input range, respectively. The measured peak SNDR at the Nyquist input frequency is 49.2 dB at 450 S/s. The whole ADC totally consumes 0.85 nW at 0.225 V including circuit leakages. The sub-nW power consumption makes it well suited for self-sustainable Internet-of-Things applications.
机译:本文以0.200至0.250 V的电源电压(VDD)为一个10位SAR ADC操作。在所提出的ADC结构中,比较器的正输入在VDD上固定,以偏置比较器的输入晶体管对具有足够的栅极-To源电压在这种低VDD处。我们提出了一种超低VDD温度补偿的偏置发生器,以偏置比较器,用于解决比较器中MOSFET的严重温度依赖性问题,该MOSFET在深度亚阈值区域中操作。提出了设计要求的详细电路分析和推导。还提出了一种双升压和低泄漏采样开关,以减轻低采样率的严重泄漏问题。测试芯片已在180nm CMOS中设计和制造。 ADC核心仅占0.024毫米(2)。测量结果表明,ADC在VDD范围内实现了稳定的性能。在0.225 V,DNL和INL分别在轨到轨输入范围内分别在+ 1.04 / -0.66和+ 0.97 / -1.04 LSB内。奈奎斯特输入频率的测量峰值SNDR为450 s / s。整个ADC完全消耗0.85 NW,0.225 V,包括电路泄漏。子NW功耗使其适用于自我可持续性的内部内容应用。

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