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A Differential Push-Pull Voltage Mode VCSEL Driver in 65-nm CMOS

机译:采用65nm CMOS的差分推挽电压模式VCSEL驱动器

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Improving power-conversion efficiency (PCE) of VCSEL drivers is paramount to improve the overall energy efficiency of the entire optical link for high-performance computing and datacenters. VCSEL diodes are normally driven single-ended with pseudo-differential current-mode drivers to maintain signal integrity. However, such conventional drivers consume significant power and are often unable to compensate for supply switching noise due to package parasitics at high data-rates. We propose a differential push-pull voltage-mode VCSEL driver to mitigate bondwire parasitics, reduce power consumption, and leverage CMOS process scaling to its maximum advantage. A proof-of-concept prototype in 65-nm CMOS process achieves the highest ever-reported PCE of 18.7 & x0025; for VCSEL drivers when normalized to VCSEL slope efficiency. It uses an asymmetric 3-tap rise and fall-based pre-emphasis to achieve a total energy/bit of 1.52 pJ/b at 16 Gb/s with an average optical power output of 1.34 dBm, OMA of 2.1 dBm, and extinction ratio of 5.92 dB.
机译:改善VCSEL驱动器的功率转换效率(PCE)对于提高高性能计算和数据中心的整个光链路的整体能效至关重要。 VCSEL二极管通常使用伪差分电流模式驱动器进行单端驱动,以保持信号完整性。然而,由于高数据速率下的封装寄生效应,这种常规驱动器消耗大量功率,并且通常无法补偿电源开关噪声。我们提出了一种差分推挽电压模式VCSEL驱动器,以减轻键合线寄生效应,降低功耗并利用CMOS工艺规模最大化的优势。 65纳米CMOS工艺的概念验证原型实现了有史以来最高的18.7和x0025的PCE。归一化为VCSEL斜率效率时,用于VCSEL驱动器。它使用非对称的基于3抽头的上升和下降预加重,以16 Gb / s的速率实现总能量/位为1.52 pJ / b,平均光功率输出为1.34 dBm,OMA为2.1 dBm,消光比5.92分贝

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