Integrated High-Voltage Inductive Power and Data-Recovery Front End Dedicated to Implantable Devices

摘要

In near-field electromagnetic links, the inductive voltage is usually much larger than the compliance of low-voltage integrated-circuit (IC) technologies used for the implementation of implantable devices. Thus most integrated power-recovery approaches limit the induced signal to low voltages with inefficient shunt regulation or voltage clipping. In this paper, we propose using high-voltage (HV) complementary metal–oxide semiconductor technology to fully integrate the inductive power and data-recovery front end while adopting a step-down approach where the inductive voltage is left free up to 20 or 50 V. The advantage is that excessive inductive power will translate to an additional charge that can be stored in a capacitor, instead of shunting to ground excessive current with voltage limiters. We report the design of two consecutive HV custom ICs—IC1 and IC2—fabricated in DALSA semiconductor C08G and C08E technologies, respectively, with a total silicon area (including pads) of 4 and 9 mm$^{2}$, respectively. Both ICs include HV rectification and regulation; however, IC2 includes two enhanced rectifier designs, a voltage-doubler, and a bridge rectifier, as well as data recovery. Postlayout simulations show that both IC2 rectifiers achieve more than 90% power efficiency at a 1-mA load and provide enough room for 12-V regulation at a 3-mA load and a maximum-available inductive power of 50 mW only. Successful measurement results show that HV regulators provide a stable 3.3- to 12-V supply from an unregulated input up to 50 or 20 V for IC1 and IC2, respectively, with performance that matches simulation results.