Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy

摘要

Strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described. Threshold currents of 2.65 mA for an uncoated device and 0.97 mA for a coated device have been obtained. A peak optical output power of 170 mW per uncoated facet for a device with a 4 /spl mu/m active region width was also achieved. Peak emissions wavelengths range from 0.956 to 1.032 /spl mu/m.