Ultra-wide-band (<40 GHz) submicron InGaAs metal-semiconductor-metal photodetectors

摘要

Submicron feature size InGaAs metal-semiconductor-metal (MSM) photodetectors with 3-dB bandwidths in excess of 40 GHz are demonstrated. Devices with a 0.3-/spl mu/m-thick active layer and an interelectrode spacing of >0.5 /spl mu/m show a roll-off of the frequency response of /spl les/2 dB up to 40 GHz when operated at 5-V bias under front illumination with 1.3-/spl mu/m light.