Improved InGaAs Metal-Semiconductor-Metal OE Mixers Using Submicron Schottky Contacts

摘要

InGaAs-based Metal Semiconductor Metal (MSM) Photodetectors were fabricated and tested as photodetectors and Opto-electronic mixers. A comparison of various processing schemes for MSM InAlAs/InGaAs photodetectors on InP substrates was conducted to minimize the dark current. InAlAs Schottky Enhanced Layers (SEL) was employed on the InGaAs-based MSMs to enhance the barrier height to reduce the dark current. The effect of SEL thickness on the performance of OE mixer was studied. The experimental results were compared to those simulated with CFDRC software.