A Long-Wavelength Photodiode on InP Using Lattice-Matched GaInAs-GaAsSb Type-II Quantum Wells

Rubin Sidhu; Ning Duan; Joe C. Campbell; Archie L. Holmes

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A Long-Wavelength Photodiode on InP Using Lattice-Matched GaInAs-GaAsSb Type-II Quantum Wells

机译：使用晶格匹配的GaInAs-GaAsSb II型量子阱在InP上的长波长光电二极管

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We report a photodiode on InP substrate with a cutoff wavelength of 2.39 (mu)m and peak room-temperature external quantum efficiency of 43percent at 2.23 (mu)m. Type-II GaInAs-GaAsSb quantum wells lattice-matched to InP were placed in the absorption region for long wavelength absorption. The device showed a peak detectivity of 5.6 X 10~(10) cm(Hz)~(1/2)W~(-1) at 200 K.

机译：我们报道了InP衬底上的一个光电二极管，其截止波长为2.39μm，在2.23μm处的峰值室温外部量子效率为43％。将与InP晶格匹配的II型GaInAs-GaAsSb量子阱放置在吸收区中以进行长波长吸收。该器件在200 K下的峰值检测灵敏度为5.6 X 10〜（10）cm（Hz）〜（1/2）W〜（-1）。

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来源
《IEEE Photonics Technology Letters》 |2005年第12期|p.2715-2717|共3页
作者
Rubin Sidhu; Ning Duan; Joe C. Campbell; Archie L. Holmes;
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作者单位

Electrical and Computer Engineering Department, University of Texas at Austin, Austin, TX 78758 USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类计量学;
关键词
Dark current; detectivity; infrared detectors; mid-wavelength infrared (MWIR); photodetectors; photodiodes; quantum wells (QWs); type-II quantum wells (QWs);

机译：暗电流;探测性;红外探测器;中波长红外（MWIR）;光电探测器;光电二极管;量子阱（QW）;II型量子阱（QW）;

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专利

1. InP-based short-wave infrared and midwave infrared photodiodes using a novel type-II strain-compensated quantum well absorption region [J] . Baile Chen, Archie L. Holmes Optics Letters . 2013,第15期

机译：使用新型II型应变补偿量子阱吸收区的基于InP的短波红外和中波红外光电二极管
2. Carrier dynamics in InP-based PIN photodiodes with InGaAs/GaAsSb type-II quantum wells [J] . Chen B., Archie Jr. L.H. Journal of Physics, D. Applied Physics: A Europhysics Journal . 2013,第31期

机译：具有InGaAs / GaAsSb II型量子阱的基于InP的PIN光电二极管的载流子动力学
3. A Novel Pseudomorphic (GaAs_(1-x)Sb_x-In_yGa_(1-y)As)/GaAs Bilayer-Quantum-Well Structure Lattice-Matched to GaAs for Long-Wavelength Optoelectronics [J] . M. PETER, J. FORKER, K. WINKLER, Journal of Electronic Materials . 1995,第11期

机译：与长波长光电电子匹配的新型伪晶格（GaAs_（1-x）Sb_x-In_yGa_（1-y）As）/ GaAs双层量子阱结构晶格
4. A 2.3/spl mu/m cutoff wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells [C] . Sidhu, R., Duan, Indium Phosphide and Related Materials, 2005. International Conference on . 2005

机译：使用晶格匹配的GaInAs-GaAsSb II型量子阱在InP上使用2.3 / spl mu / m截止波长光电二极管
5. Simulation and Comparison of High Speed GaAsSb-InP and InGaAs-InP Uni-Traveling-Carrier Photodiodes [D] . Guneroglu, Ugur 2019

机译：高速GaAsSb-InP和InGaAs-InP单向载流子光电二极管的仿真与比较
6. The structural and optical properties of GaSb/InGaAs type-II quantum dots grown on InP (100) substrate [O] . Zhang Shuhui, Wang Lu, Shi Zhenwu, 2012

机译：在InP（100）衬底上生长的GaSb / InGaAs II型量子点的结构和光学性质
7. SWIR/MWIR InP-Based p-i-n Photodiodes with InGaAs/GaAsSb Type-II Quantum Wells [O] . Baile Chen, Weiyang Jiang, Jinrong Yuan, 2015

机译：具有InGaas / Gaassb II型量子阱的sWIR / mWIR Inp基p-i-n光电二极管

A Long-Wavelength Photodiode on InP Using Lattice-Matched GaInAs-GaAsSb Type-II Quantum Wells

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