Numerical Study on Quantum Efficiency Enhancement of a Light-Emitting Diode Based on Surface Plasmon Coupling With a Quantum Well

Chuang W.-H.; Wang J.-Y.; Yang C. C.; Kiang Y.-W.

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Numerical Study on Quantum Efficiency Enhancement of a Light-Emitting Diode Based on Surface Plasmon Coupling With a Quantum Well

机译：基于表面等离子体与量子阱耦合的发光二极管量子效率提高的数值研究

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摘要

We demonstrate the numerical study results of the enhancements of internal quantum efficiency (IQE) and external quantum efficiency (EQE) of a semiconductor quantum well when it is coupled with surface plasmons (SPs) induced on a grating interface

机译：我们展示了与光栅界面上诱导的表面等离子体激元耦合时半导体量子阱的内部量子效率（IQE）和外部量子效率（EQE）增强的数值研究结果

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来源
《IEEE Photonics Technology Letters》 |2008年第16期|p.1339-1341|共3页
作者
Chuang W.-H.; Wang J.-Y.; Yang C. C.; Kiang Y.-W.;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类光电子技术、激光技术;计量学;
关键词
Light-emitting diodes; quantum wells (QWs); surface waves;

机译：发光二极管;量子阱（QW）;表面波;

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专利

1. Enhancement of the External Quantum Efficiency of a Silicon Quantum Dot Light-Emitting Diode by Localized Surface Plasmons [J] . Beak-Hyun Kim, Chang-Hee Cho, Jin-Soo Mun, Advanced Materials . 2008,第16期

机译：局部表面等离激元增强硅量子点发光二极管的外部量子效率
2. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons [J] . Yung-Chi Yao, Jung-Min Hwang, Zu-Po Yang, Scientific reports. . 2016,第1期

机译：通过局部表面等离子体激元提高GaN基垂直型发光二极管的外部量子效率
3. Localized surface plasmon resonance enhanced quantum dot light-emitting diodes via quantum dot-capped gold nanoparticles [J] . Chen Jing, Huang Qianqian, Du Qing Guo, RSC Advances . 2014,第101期

机译：量子点封顶的金纳米粒子局部表面等离子体共振增强量子点发光二极管
4. Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diode [C] . Shen Kun-Ching, Chen Cheng-Yen, Lu Yen-Cheng, 2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS) . 2010

机译：具有金属/ SiO 2 / GaN结构的增强的表面等离子体激元耦合效应，可进一步提高发光二极管的发射效率
5. Quantum efficiency enhancement for GaN based light-emitting diodes and vertical cavity surface-emitting lasers. [D] . Zhang, Fan. 2014

机译：GaN基发光二极管和垂直腔表面发射激光器的量子效率增强。
6. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons [O] . Yung-Chi Yao, Jung-Min Hwang, Zu-Po Yang, -1

机译：通过局部表面等离子体激元提高GaN基垂直型发光二极管的外部量子效率
7. Numerical Study on Quantum Efficiency Enhancement of a Light-Emitting Diode Based on Surface Plasmon Coupling With a Quantum Well [O] . Wen-hung Chuang, Jyh-yang Wang, C. C. Yang, 2008

机译：基于表面等离子体耦合量子阱的发光二极管量子效率增强的数值研究
8. Pressure Study of the External Quantum Efficiency of N-Doped GaAs(1-x)P(x) Light-Emitting Diodes. [R] . Nelson, R. J., Holonyak, N., Coleman, J. J., 1976

机译：N掺杂Gaas（1-x）p（x）发光二极管外量子效率的压力研究。

Numerical Study on Quantum Efficiency Enhancement of a Light-Emitting Diode Based on Surface Plasmon Coupling With a Quantum Well

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