Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diode

机译：具有金属/ SiO 2 / GaN结构的增强的表面等离子体激元耦合效应，可进一步提高发光二极管的发射效率

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摘要

Further enhancement of the efficiency of an InGaN/GaN quantum well (QW) light-emitting diode (LED) through QW coupling with surface plasmons generated on Ag nano-gratings by inserting a SiO2 layer between semiconductor and metal is demonstrated.

机译：通过在半导体与半导体之间插入SiO 2 层与银纳米光栅上产生的表面等离激元进行QW耦合，进一步提高InGaN / GaN量子阱（QW）发光二极管（LED）的效率。演示金属。

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来源
《2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS)》|2010年|p.1-2|共2页
会议地点 San Jose CA(US);San Jose CA(US);San Jose CA(US);San Jose CA(US)
作者
Shen Kun-Ching; Chen Cheng-Yen; Lu Yen-Cheng; Liao Che-Hao; Chen Chih-Yen; Hsieh Chieh; Yang C. C.;
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Graduate Institute of Electronics Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei, Taiwan, R.O.C.;

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原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
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1. Efficiency enhancement of InGaN/GaN blue light-emitting diodes with top surface deposition of AlN/Al 2O 3 [J] . Kwangeun Kim, Mengyuan Hua, Dong Liu, Nano Energy . 2018,第期

机译：IngaN / GaN蓝色发光二极管效率提高Aln / Al 2 O 3
2. Bloch surface plasmon enhanced blue emission from InGaN/GaN light-emitting diode structures with Al-coated GaN nanorods [J] . Zhang Guogang, Zhuang Zhe, Guo Xu, Nanotechnology . 2015,第12期

机译：Bloch表面等离子体激元增强了具有Al涂层的GaN纳米棒的InGaN / GaN发光二极管结构的蓝光发射
3. Improved light emission of GaN-based light-emitting diodes by efficient localized surface plasmon coupling with silver nanoparticles [J] . Cheng-Hsueh Lu, Shang-En Wu, Yen-Lin Lai Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2014,第Null期

机译：通过高效局部表面等离子体耦合与银纳米颗粒的高效局部等离子体耦合改善了GaN的发光二极管的光发射
4. Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diode [C] . Shen Kun-Ching, Chen Cheng-Yen, Lu Yen-Cheng, Conference on Lasers and Electro-Optics . 2010

机译：用金属/ SiO 2 / GaN结构提高表面等离子体耦合效果，用于进一步提高发光二极管的发光效率
5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

机译：GaN基发光二极管上的光学功能结构，用于提高光提取效率和控制发射模式。
6. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons [O] . Yung-Chi Yao, Jung-Min Hwang, Zu-Po Yang, -1

机译：通过局部表面等离子体激元提高GaN基垂直型发光二极管的外部量子效率
7. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons [O] . Yung-Chi Yao, Jung-Min Hwang, Zu-Po Yang, 2016

机译：通过局部表面等离子体增强了GaN基垂直发光二极管的外部量子效率

Enhanced surface plasmon coupling effect with a metal/SiO2/GaN structure for further improving the emission efficiency of a light-emitting diode

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