Improvement of Light Extraction Efficiency and Reduction of Leakage Current in GaN-Based LED Via V-Pit Formation

摘要

Four types of GaN-based light-emitting diodes (LEDs) with V-pits formed in different regions were grown by metal–organic chemical vapor deposition. The position of the V-pits embedded in the layers of the LED structures was controlled by varying the growth temperature. We achieved the highest output power and lowest leakage current values with the LED structures comprising V-pits embedded in active regions and the p-GaN textured surface. The V-pit formation enhances the light output power and reverse voltage values by 1.3 times the values of the conventional LED owing to the enhancement of the light scattering probability and the effective filtering of threading dislocations.