机译:具有纳米粗糙化的p-GaN表面的基于InGaN / GaN的发光二极管的光提取效率的提高
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
Laboratory of Nano-photonic Functional Materials and Devices, Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, People's Republic of China;
机译:纳米粗糙p-GaN表面改善了InGaN-GaN发光二极管的性能
机译:通过准分子激光辐照提高具有纳米粗糙化p-GaN表面的InGaN / GaN发光二极管的性能
机译:通过使用二氧化硅胶体掩模的p-GaN表面的随机图案提高GaN基发光二极管的光提取效率
机译:具有微孔阵列和纳米粗糙的ZnO结构的InGaN发光二极管的光提取效率的提高
机译:GaN基发光二极管上的光学功能结构,用于提高光提取效率和控制发射模式。
机译:聚苯乙烯纳米光学光刻法制备的光子晶体结构P-GAN纳米棒的研究提高了INGAN / GAN绿色发光二极管光提取效率
机译:通过在p-GaN表面图案化光子准晶体和n侧侧壁粗糙化来增强GaN基发光二极管的光输出功率