Improvement of InGaN-GaN Light-Emitting Diode Performance With a Nano-Roughened p-GaN Surface

摘要

This investigation describes the development of InGaN-GaN light-emitting diode (LED) with a nano-roughened top p-GaN surface which uses Ni nano-mask and wet etching. The light output of the InGaN-GaN LED with a nano-roughened top p-GaN surface is 1.4 times that of a conventional LED, and wall-plug efficiency is 45percent higher. The operating voltage of InGaN-GaN LED was reduced from 3.65 to 3.5 V at 20 mA and the series resistance was reduced by 20percent. The light output is increased by the nano-roughening of the top p-GaN surface. The reduction in the series resistance can be attributed to the increase in the contact area of nano-roughened surface.