Room-temperature lasing operation of GaInNAs-GaAs single-quantum-well laser diodes

摘要

We have succeeded in demonstrating continuous-wave (CW) operation of GaInNAs-GaAs single-quantum-well (SQW) laser diodes at room temperature (RT). The threshold current density was about 1.4 kA/cm/sup 2/, and the operating wavelength was approximately 1.18 /spl mu/m for a broad-stripe geometry. Evenly spaced multiple longitudinal modes were clearly observed in the lasing spectrum. The full-angle-half-power far-field beam divergence measured parallel and perpendicular to the junction plane was 4.5/spl deg/ and 45/spl deg/, respectively. A high characteristic temperature (T/sub 0/) of 126 K under CW operation and a small wavelength shift per ambient temperature change of 0.48 nm//spl deg/C under pulsed operation were obtained. These experimental results indicate the applicability of GaInNAs to long-wavelength laser diodes with excellent high-temperature performance.