Room-temperature operation of GaInAsN-GaAs laser diodes in the1.5-Μm range

摘要

GaInAsN-GaAs double quantum-well (DQW) laser structures emittingnin the 1.5-Μm range were grown by solid source molecular beam epitaxynusing a radio frequency plasma source for nitrogen activation. Lasingnoperation in the 1.5-Μm wavelength region has been realized fornfabricated ridge waveguide laser diodes (LDs) under pulsed condition upnto record high temperatures of 80°C resulting in an emissionnwavelength of 1540 nm. This is the highest emission wavelength for laserndiode operation based on GaAs. In addition, to investigate the opticalnproperties of the active region, photoluminescence studies of underlyingnGaInAsN-GaAs QW structures emitting at wavelengths up to 1.55 Μm arenpresented