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机译:氮对In / sub y / Ga / sub 1-y / As / sub 1-x / N / sub x / -GaAs量子阱的能带结构和材料增益的影响
ISOMUniv. Politecnica de Madrid, Spain;
indium compounds; gallium arsenide; conduction bands; effective mass; semiconductor quantum wells; carrier density; quantum well lasers; III-V semiconductors; conduction subband structure; quantum wells; band anticrossing model; long-wavelength lasers; effective bandgap; nonparabolicity; peak gain; material gain; band structure engineering; thermal dependence; design parameters; band-edge effective masses; 1.55 micron; InGaAsN-GaAs;
机译:通过10波段,8波段和6波段k·p模型计算的In_xGa_(1-x)As_(1-y)N_y / GaAs量子阱的电子能带结构和光学透明条件的比较
机译:k•p形式主义对In_xGa_(1-x)As_(1-y)N_y / GaAs量子阱的能带结构的影响:8波段和10波段模型的比较
机译:Cd_xZn_(1-x)S / Cd_yZn_(1-y)S晶格匹配GaAs衬底的能带阵容和光学增益设计
机译:k·p形状对{sub} {sub}(1-x)为{sub}(1-y)n {sub} y / gaas量子的频带结构的影响
机译:II-VI DMS异质结构的磁光研究:锌(1-xy)锰(x)镉(y)硒/锌(1-x)锰(x)硒单量子阱,锌(1-x)镉( x)硒/锌(1-y)锰(y)硒I型和硒化镉/碲化锌的II型超晶格。
机译:InGaAs / GaAs / AlGaAs阶跃量子阱中带间激发的Rashba型和Dresselhaus型圆形光电流效应引起的自旋光电流谱
机译:GaAs 1-x sub> Bi x sub> / GaN y sub> As 1-y sub> II型量子阱:新应变- GaAs基近红外和中红外光子学的平衡异质结构
机译:np-(p(+) - n(+)) - n al(y)Ga(1-y)as-Gaas-In(x)Ga(1-x)as量子阱激光器,p(+) - n n + Gaas上的(+)Gaas-InGaas隧道接触