n-p-(p(+)-n(+))-n Al(y)Ga(1-y)As-GaAs-In(x)Ga(1-x)As Quantum Well Laser with p(+)-n(+)GaAs-InGaAs Tunnel Contact on n GaAs

摘要

Data are presented on the growth, by metalorganic chemical vapor deposition, andfabrication of n-p (n-up) AlGaAs-GaAs-InGaAs quantum-well heterostructure lasers using a p+-n+ GaAs-InGaAs reverse-biased tunnel junction to contact the n-type GaAs substrate. The lasers operate continuously at 300 K with a threshold of approx. 37 mA for a 10-micrometer-wide native-oxide-defined gain-guided stripe (cavity length approx. 375 micrometers). Comparison tunnel junctions similar to those used in the diode lasers are also fabricated and exhibit low reverse-biased series resistances ( approx. 2.2 ohms, area approx. 4.5 X larger). Quantum-well lasers, Tunnel-junction contact, Carbon doping, III-V Native oxides.