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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >Light Emission From Silicon in Photonic Crystal Nanocavity
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Light Emission From Silicon in Photonic Crystal Nanocavity

机译:光子晶体纳米腔中硅的发光

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We have introduced a photonic crystal into a single-crystal silicon slab in order to manipulate the light emission. When the lattice constant of a defect-free photonic crystal matches the wavelength of light in the medium, the light emitted from the silicon is resonantly extracted at the photonic band edge within the escape light cone. When the lattice constant is larger than the wavelength, Brillouin zone folding of the photonic band also allows the light to be extracted; we achieved an intensity that was enhanced by a factor of $sim$20 due to the diffraction of internal light into the light cone. We have also created a point defect in photonic crystals with smaller lattice constants that functions as a nanocavity and strongly interacts with the silicon emitter. Four cavity modes were observed, with different $Q$ -factors and emission patterns. The mode orders were assigned using the resonant wavelengths and polarizations. The observed emission at room temperature was enhanced by a factor of $sim$30 in comparison to that of an unprocessed area of silicon-on-insulator. Our study demonstrates that employing a photonic crystal nanocavity in silicon can greatly improve the light extraction efficiency, the characteristics of the radiation pattern, and the internal quantum efficiency.
机译:我们已将光子晶体引入单晶硅平板中,以控制光发射。当无缺陷的光子晶体的晶格常数与介质中的光的波长匹配时,从硅发出的光在逃逸光锥内的光子带边缘共振地提取。当晶格常数大于波长时,光子带的布里渊区折叠也允许光被提取。由于内部光向光锥的衍射,我们获得的强度提高了$ sim $ 20。我们还在具有较小晶格常数的光子晶体中创建了一个点缺陷,该点缺陷起着纳米腔的作用,并与硅发射极发生强烈相互作用。观察到四种腔模式,具有不同的$ Q $因子和发射模式。使用谐振波长和偏振来分配模式阶数。与绝缘体上硅的未处理区域相比,室温下观察到的排放增加了30美元。我们的研究表明,在硅中使用光子晶体纳米腔可以大大提高光提取效率,辐射方向图的特性和内部量子效率。

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