首页> 外国专利> Silicon-based light emitter for use in photonic crystal structure for laterally radiating light, has silicon dioxide-layer provided on substrate, where emitter radiates light that is coupled into wave guide by resonator structure

Silicon-based light emitter for use in photonic crystal structure for laterally radiating light, has silicon dioxide-layer provided on substrate, where emitter radiates light that is coupled into wave guide by resonator structure

机译:用于光子晶体结构中用于横向辐射光的硅基光发射器,在基板上提供二氧化硅层,发射器辐射出通过谐振器结构耦合到波导中的光

摘要

The emitter has a front-sided metal contact (10), a dielectric protection layer (9), and a luminescence center (8) including a silicon dioxide-layer (2) provided on a silicon-on-insulator substrate, where the emitter radiates a light laterally. The light is coupled into a wave guide (13) by evanescent field coupling or by a resonator structure, where the emitter is processed on a silicon-on-insulator. The silicon dioxide layer is utilized as a slot-wave guide. A cavity (4) is etched with vertical walls in an upper silicon layer (1) of the substrate.
机译:发射极具有正面金属触点(10),介电保护层(9)和包括设置在绝缘体上硅衬底上的二氧化硅层(2)的发光中心(8),其中发射极侧面辐射光。光通过e逝场耦合或谐振器结构耦合到波导(13)中,其中发射极在绝缘体上硅上处理。二氧化硅层被用作缝隙波导。在衬底的上硅层(1)中蚀刻具有垂直壁的腔(4)。

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