Semiconductor components, in particular photodetectors, light emitting diodes, optical modulators and waveguides with multilayer structures grown on silicon substrates

摘要

A semiconductor component, selected from the group comprising a photodetector, a light emitting diode, an optical modulator and a waveguide. The semiconductor component comprises an Si substrate, an active region formed on said substrate, and an Si capping layer on said active region. In one embodiment the active region is a superlattice comprising alternating layers of Si_1-yC_y and Si_1-x-yGe_xC_y, with the atomic fraction y of the Si_1-x-yGe_xC_y layers being equal to or different from the atomic fraction y of the Si_1-yC_y layers. In another embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si_1-yC_y and Si_1-xGe_x layers. In a third embodiment it is a superlattice comprising a plurality of periods of a three-layer structure comprising Si, Si_1-yC_y and Si_1-x-yGe_xC_y layers, with the atomic fraction y of the Si_1-x-yGe_xC_y layers being equal to or different from the atomic fraction y of the Si_1-yC_y layers. The components have faborable optical and electrical properties and are suitable for integration on a Si substrate.