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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >High-Performance Photonic Integrated Circuits on Silicon
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High-Performance Photonic Integrated Circuits on Silicon

机译:硅上高性能光子集成电路

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Heterogeneous integration of 111-V semiconductor photonics combined with silicon foundry technology enables low-cost, high-performance photonic integrated circuits. Highly reliable lasers using epitaxial deposition of quantum dot lasers, with <2 mA threshold and lifetime 100 years at 35 C have been demonstrated at University of California, Santa Barbara (UCSB) and can be manufactured at wafer scale. Reduction in the linewidth enhancement factor allows isolator-free operation. This technology enables cost-effective photonic integrated circuits for applications such as microwave photonics and data communications. Optical frequency synthesis with similar to 1.5 Hz accuracy is demonstrated using heterogeneous integration. Silicon photonics applications that will benefit from future heterogeneous integration are also demonstrated, including high dynamic range microwave photonic links and optical switching technology that scales to hyperscale datacenters with hundreds of thousands of servers.
机译:111-V半导体光子的异构整合与硅铸造技术相结合,实现了低成本,高性能的光子集成电路。在加利福尼亚州Santa Barbara(UCSB)的加州大学(UCSB)都证明了35℃的高度可靠的激光器,在35℃下,已在35℃下展示了100年的速度。减少线宽增强因子允许无隔离器操作。该技术使得具有经济高效的光子集成电路,用于微波光子学和数据通信等应用。使用异构集成证明了具有类似于1.5Hz精度的光学频率合成。还可以证明将有益于未来的异构集成的硅光子,包括高动态范围微波光子链接和光学切换技术,可扩展到具有数十万台服务器的超距离数据中心。

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