硅锗光子晶体复合电极对非晶硅电池性能的影响

摘要

The new ZnO/SiGe-PCs/Ag back-reflector electrode was fabricated by template-assisted electrochemical deposition from air-and water stable ionic liquids on the ZnO:B surface of amorphous silicon solar cell .The optoelectronic properties of amorphous silicon cell were characterized for different ZnO /SiGe-PCs/Ag and ZnO/Ag back electrode .The short circuit current and the external quantum efficiency of amorphous silicon solar cell can be improved by used ZnO/SiGe-PCs/Ag composite back-reflector electrode . The efficiency of amorphous silicon solar cell is improved with the increasing of the radius of the SiGe photonic crystals.The new method can be presented for improve the efficiency and short circuit current of amorphous silicon solar cell with new photonic crystals back-reflector electrode .%采用离子液体电沉积法辅助胶体晶体模板法在非晶硅电池板的ZnO：B表面构筑硅锗光子晶体，制备出ZnO／SiGe-PCs／Ag（ ZnO／SiGe Photonic Crystals／Ag）复合背电极，并研究了ZnO／SiGe-PC／Ag复合背电极与ZnO／Al背电极的非晶硅电池的光电性能。实验结果表明，基于ZnO／SiGe-PCs／Ag复合结构背电极能够提高非晶硅太阳能电池的外量子效率和短路电流密度；并且，随着硅锗光子晶体孔径的增加，电池的效率明显增加。这种新型的光子晶体复合电极结构，对于改善非晶硅叠层电池的光电效率和光电流匹配问题提供一种新途径。