Si-Ge SOLAR CELL USING MULTIBAND Si-Ge THIN FILM SILICON CRYSTAL AND EFFICIENCY IMPROVEMENT METHOD THEREOF

摘要

The present invention relates to a technique for improving the photoelectric conversion efficiency by enlarging a junction area on a front surface portion of a substrate in a solar cell and forming a low energy band gap on a rear surface portion of the substrate. The present invention comprises a trench area (121), an n-type junction area (122), and an antireflection layer on the front surface portion of the substrate (110). The present invention comprises a Ge layer (133) and a polysilicon (134) on the rear surface portion of the substrate (110).