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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >High-Performance Photonic Integrated Circuits on Silicon
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High-Performance Photonic Integrated Circuits on Silicon

机译:硅上的高性能光子集成电路

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Heterogeneous integration of 111-V semiconductor photonics combined with silicon foundry technology enables low-cost, high-performance photonic integrated circuits. Highly reliable lasers using epitaxial deposition of quantum dot lasers, with <2 mA threshold and lifetime 100 years at 35 C have been demonstrated at University of California, Santa Barbara (UCSB) and can be manufactured at wafer scale. Reduction in the linewidth enhancement factor allows isolator-free operation. This technology enables cost-effective photonic integrated circuits for applications such as microwave photonics and data communications. Optical frequency synthesis with similar to 1.5 Hz accuracy is demonstrated using heterogeneous integration. Silicon photonics applications that will benefit from future heterogeneous integration are also demonstrated, including high dynamic range microwave photonic links and optical switching technology that scales to hyperscale datacenters with hundreds of thousands of servers.
机译:111-V半导体光子的异质集成与硅铸造技术相结合,可实现低成本,高性能的光子集成电路。加州大学圣塔芭芭拉分校(UCSB)展示了采用外延沉积量子点激光器的高度可靠的激光器,其阈值<2 mA,寿命在35°C下寿命> 100年,可在晶圆级生产。减小线宽增强因子可实现无隔离器操作。这项技术可为微波光子和数据通信等应用提供具有成本效益的光子集成电路。使用异构积分证明了具有类似于1.5 Hz精度的光频率合成。还展示了将从未来异构集成中受益的硅光子应用,包括高动态范围微波光子链路和可扩展至具有数十万台服务器的超大规模数据中心的光交换技术。

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