Optimization of GaAs amplification photodetectors for 700% quantum efficiency

摘要

We investigate the device physics of novel GaAs waveguide photodetectors with integrated photon multiplication. Such detectors have the potential to achieve simultaneously high saturation power, high speed, high responsivity, and quantum efficiencies above 100%. Our device design vertically combines a bulk photodetector ridge waveguide region with laterally confined quantum wells for amplification. Measurements on the first device generation show quantum efficiencies of only 56%. Advanced device simulation is employed to analyze these devices and to reveal performance limitations. Excellent agreement between simulations and measurements is obtained. Device design optimization is proposed, promising more than 700% efficiency.