Theoretical study of the quantum efficiency of InGaAs/GaAs resonant cavity enhanced photodetectors

摘要

We present a theoretical analysis on the quantum efficiency of a resonant cavity InGaAs/GaAs P-i-n photodetector (PD) for the ultrashort optical connections. The numerical method of calculation of quantum efficiency combining a transfer matrix method and a energy conservation law is offered. Using anomalous dispersion (AD) mirror as the top mirror flattopped QE spectrum has been obtained. Conditions for ideal flattopped the spectral response have been received. We present a design with a maximum QE of 93.5% and 3 nm bandwidth at 0.02 dB below the peak.