Excess Avalanche Noise in $hbox{In}_{0.52}hbox{Al}_{0.48}hbox{As}$

摘要

Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p+-i-n+ and n +-i-p+ diodes with nominal avalanche region widths between 0.1 and 2.5 mum. With pure electron injection, low excess noise was measured at values corresponding to effective k=beta/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm