Temperature-Dependent Analytical Model for Microwave and Noise Performance Characterization of $hbox{In}_{0.52}hbox{Al}_{0.48}hbox{As/In}_{m} hbox{Ga}_{1-m}hbox{As}$ $(hbox{0.53} leq m leq hbox{0.8})$ DG-HEMT

摘要

This paper presents a comprehensive charge-control-based temperature dependent analytical model for symmetric tied-gate $hbox{In}_{0.52}hbox{Al}_{0.48}hbox{As/In}_{m}hbox{Ga}_{1-m} hbox{As}$ $(hbox{0.53} leq m leqbreak hbox{0.8})$ DG-HEMT. The ambient temperature $T$ in the analysis is varied from $-hbox{50} ^{circ}hbox{C}$ to 200 $^{circ}hbox{C}$ in order to predict the device reliability for low-noise microwave frequency applications over a broad temperature range. The increase in temperature $T$ is found to cause degradation in the microwave and noise performance of the device in terms of lower maximum frequency of oscillation $(f_{max})$, lower unilateral power gain $(G_{u})$ , and higher minimum noise figure $(hbox{NF}_{min})$. Although increased channel indium composition $m$ leads to improved microwave performance, it is also observed to cause degradation in the noise performance of the device. The effect of channel indium composition on the temperature sensitivity of various microwave and noise performance parameters is also investigated. The results obtained thereof using the proposed analytical model are validated with the ATLAS device simulation results.